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10s SXP F4 PM2 Introduction

A ‘white paper’ to document the plan to
introduce PM2 to 10s process flow.

Contents

1.    Plan Summary. 1

Boise
action trigger points (WW04 proposal). 2

2.    Concerns and
considerations. 3

3.    Experiment plan. 4

3.1. BKM Agrate PM2 film stack fingerprint. 4

3.2. 20nm development preview assessment. 5

3.3. Boise module process matching to Agrate
fingerprint reference. 7

3.4. Boise 20nm integrated process development. 11

4.    Data summary and
links. 13

5.    Execution log. 13

References. 13

Edit
history. 13

1.     Plan
Summary

Desired sequence
of events in phases:

1.  F14
PM2-based process development (L2 phase covered by Lorenzo) à fingerprint PM2
BKM film and stack once reasonable results are obtained or before F4 PM2
activity start, whichever is earlier

2.  F14
performs extra characterization for F4 20nm development scoping (TBD) à issues are
identified

3.  F4
co-sputter PM2 capability comes up (TBD) à
match F4 PM2 BKM fingerprint reference

4.  F4 PM2
process integration activities start to address already identified issues as
well as to assess other issues.
Initiation of integration activities will be gated by reasonable morpho
results in F14.

Schedule boundary conditions:

F14 materials scorecard (based on test wafer
and cantilever) – maintained by Agostino

F14 integration plan (hyperlink to file)

·
Agrate key dates: WW03 PM2 material
characterization complete

F4 PVD plan (hyperlink to PVD module project review
– from Hitlist Meeting)

·
InTe, GeTe target delivery plan has been pulled
into end of January

Boise action trigger points (WW04 proposal)

Agrate
checkpoints

Triggered
Boise actions

- L0 pass
(composition, phase transformation, single phase)

- L1 CLV
meeting device requirement

- PVD
module development and matching to Agrate fingerprint reference (section 3.3).  PVD capability will be in place WW04.

- CLV electrical
check (section 3.3).  Cantilever
is expected to be ready in WW08.

- L2 process
integration confirming NCS fix

- 20nm
process risk preview (section 3.1, 3.2)

- 20nm
integrated process development (section 3.4)

2.     Concerns
and considerations

F4 new PM alloy integration concerns and mitigation plan

Concerns
and considerations

Plans
to address

1

PM2 chalcogenide
alloy thermal stability: stress,
density (volume) change

Agrate to collect
reference fingerprint data once reasonable results are achieved.  (already in Enrico’s plan)

Boise to match
upon start-up.  See plan below.

2

PM2 stack
inter-diffusion through BKM C

Agrate to collect
reference fingerprint data once reasonable results are achieved.  (already in Lorenzo’s plan)

3

Chalcogenide film
adhesion failure

4-pt bending
characterization of F14 BKM stack by Boise lab once reasonable results are
achieved. (compare to PM1 baseline)

Boise to match
upon start-up.  See plan below.

4

Full stack WL etch
profile and sidewall etch residue level with high indium content with BKM
etch chemistry

POR: CH4-based
bulk + PM flash

pre-POR: TBD

Agrate morpho
preview of F4 POR.  See plan.

Pre-POR to be
checked in Boise. (TBD)

5

PM2 interaction
with SD etch in full stack WL etch (damage, cross-contamination)

POR:
Ar/Cl2/N2-based etch

Pre-POR: Ar/CH2F2,
CH4

Agrate morpho and
electrical preview of F4 POR.

Pre-POR to be checked
in Boise.

5

PM2 etch
selectivity with respect to hardmask stack removal rate

POR: nitride

Pre-POR:
nitride/ox/nitride stack

Agrate morpho
preview of POR.  See plan.

pre-POR to be
checked in Boise (TBD)

6

PM2 etch residue removal
effectiveness and wet clean damage to PM2

POR: citric acid

Pre-POR: NH4OH +
citric combination

Agrate morpho
& electrical preview of POR and pre-POR.  See plan.

7

PEALD oxide seal
damage to PM2, aka time 0 damage:

POR: 50 deg C
PEALD oxide

pre-POR: oxide /
He treat / oxide, pre-heat, ex situ plasma passivation (O2, N2, etc.)

Agrate morpho
& electrical (?) preview of POR and pre-POR.  See plan.

8

Thermally and
optically activated ‘latent’ PM2 void defects in line and SLAM
structures

Agrate morpho QTA
preview.  See plan.

9

BL PM BT step
interaction with PM2 alloy

POR: CH4/CF4 BT +
CH4 bulk etch

Agrate morpho
preview of F4 POR.

10

PM2 damage by BL
etch / clean / seal

Agrate morpho
preview

* All POR and pre-POR in the table refer to F4.

3.     Experiment
plan

3.1.   BKM
Agrate PM2 film stack fingerprint

This section is to be done by Agrate.

Data collected here will serve as a reference for F4 PM2
co-sputter PVD module start-up.

F4 L0 screening plan is described in PM2 alloy scorecard.

Additional characterization items for the benefit of F4
process flow are listed below.

Response

Structure

Sensitivity

# of
runs wafers measmts

Exp
type

Success
criteria

Test
wafer characterization

PM film stress, as
deposited and post bake @ 350C, 375C, 400C

PM2/C on Si test
wafer

Gross check

1 run, 1 wafer per
temp

Fingerprint

Not applicable

PM film XRR
thickness as deposited and post bake @ 350C, 375C, 400C

PM2/C on Si test
wafer

Gross check

1 run, 1 wafer per
temp

Fingerprint

Not applicable

SIMS profile of full
device film stack as deposited and post bake @ 320C, 375C, 400C

Full stack on Si
test wafer

Gross check

1 run, 1 wafer per
temp, wfr center

2-way

As deposited and
post bake are equivalent

4-pt bending surface
energy of PM/electrode interface post bake

Full stack on Si
test wafer

Gross check

1 run, 1 wafer

2-way

Equivalent or
better than PM1 baseline

3.2.   20nm
development preview assessment

This section is to be done by Agrate.

Data collection (success criteria waiver to be made by
engineering judgment) will gate initiation of Boise process integration
activities.

Response

Structure

Sensitivity

#
of runs wafers measmts

Exp
type

Success
criteria

Morpho
wafer characterization

XTEM WL ACI
sidewall profile and EDS elemental map with Boise POR PM etch: CH4 + PM flash

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

XTEM WL ACI
sidewall profile and EDS elemental map with Boise POR SD1 etch: Ar/Cl2/N2-based

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

XTEM WL ACI
remaining nit HM thickness

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

Post WL clean (citric acid) sidewall chalcogenide
residue detected by sidewall SEM BSE @ 1.5keV

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

Post WL clean (citric) PM2 void detected by sidewall
SEM BSE @ 5keV

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or better
than Agrate PM1 baseline

Post WL clean (NH4OH + citric acid) sidewall
chalcogenide residue detected by sidewall SEM BSE @ 1.5keV

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

Post WL clean (NH4OH + citric acid) PM2 void
detected by sidewall SEM BSE @ 5keV

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

Post WL seal (PEALD oxide) XSEM damage to PM2

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

Post WL seal (PEALD oxide / He treat / oxide) XSEM
damage to PM2

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

XSEM BSE PM2 void
count post 395C exacerbation bake

PTx14 array morpho
QTA

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

XTEM BL ACI
sidewall profile and EDS elemental map for F14 BKM

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

XTEM BL ACI sidewall
profile and EDS elemental map with PM
BT + bulk etch (F4 POR).

PTx14 full stack
flow

Gross check

1 run, 1 wafer, 2
sites

1-way

Equivalent to or
better than Agrate PM1 baseline

Electrical
characterization

IG-88 yield, VT
& Rvirgin distributions with citric
acid WL clean

PM-only PTx14

Gross check

1 run, 3 wafers,
STD test plan

1-way

Equivalent to or
better than Agrate PM1 baseline

IG-88 yield, VT
& Rvirgin distributions with NH4OH
+ citric combo WL clean

PM-only PTx14

Gross check

1 run, 3 wafers,
STD test plan

1-way

Equivalent to or
better than Agrate PM1 baseline

IG-88 yield, VT
& Rvirgin distributions with PEALD
oxide WL seal

PM-only PTx14

Gross check

1 run, 3 wafers,
STD test plan

1-way

Equivalent to or
better than Agrate PM1 baseline

IG-88 yield, VT
& Rvirgin distributions with PEALD
oxide / He treat / PEALD oxide WL seal

PM-only PTx14

Gross check

1 run, 3 wafers,
STD test plan

1-way

Equivalent to or
better than Agrate PM1 baseline

IG-88 yield, VT
& Rvirgin distributions with pre
seal deposition treatment (TBD)

PM-only PTx14

Gross check

1 run, 3 wafers,
STD test plan

1-way

Equivalent to or
better than Agrate PM1 baseline

3.3.   Boise
module process matching to Agrate fingerprint reference

This section is to be done by Boise.  It is the same as the materials
characterization plan in F14, except it is to be done in F4 with 300mm
equipment.

This activities will start when PM2 deposition capability
becomes available in F4.

Response

Structure

Sensitivity

#
of runs wafers measmts

Exp
type

Success
criteria

Test
wafer characterization

PM film modulus
form nano indentation

PM (thickness TBD)
on Si test wafer

Gross check

1 run

2-way

None –
characterization only

PM film stress, as
deposited and post bake @ 320C

PM2/C on Si test
wafer

Gross check

1 run, 1 wafer per
temp

1-way

Equivalent to
Agrate reference

PM film XRR
thickness as deposited and post bake @ 350C, 375C, 400C

PM2/C on Si test
wafer

Gross check

1 run, 1 wafer per
temp

1-way

Equivalent to
Agrate reference

SIMS profile of
full device film stack as deposited and post bake @ 320C, 375C, 400C

Full stack on Si
test wafer

Gross check

1 run, 1 wafer per
temp, wfr center

1-way

Equivalent to
Agrate reference

4-pt bending
surface energy of PM/electrode interface post bake

Full stack on Si
test wafer

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

ICP film
composition and impurity level

PM2 film on test
wafer

Gross check

1 run, 1 wafer

1-way

Equivalent or
better than Agrate reference

Film XRF
density and thickness

PM2 film on
test wafer

Gross check

1 run, 1 wafer

XRD phase
segregation after 320C 600s 375C 600s

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Single phase

Planview TEM phase
segregation after 375C 600s anneal

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Single phase

DSC
crystallization temp (10degC/min)

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

DSC
crystallization temp width (10degC/min)

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

Rs(T) - Tx @ onset
[⁰C]

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

Rs(T) 10⁰C/min
- Tx @ max slope [⁰C]

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

Rs(T) - Tx @ 0.1
Ohm-cm [⁰C]

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

ΔT (C ) - 1
=> 0.1 Ohmcm [⁰C]

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

Post annealing
resistivity (Rs450C) [mOhm cm]

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

Tm - DSC -
literature [⁰C]

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

Mass density
[g/cm3]

TEOS / PM (30nm) /
carbon (5nm)

Gross check

1 run, 1 wafer

1-way

Equivalent to
Agrate reference

Wet chemical leaching test

PM on test wafer

Electrical
characterization

Set Speed [ns]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Vth min [V]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Vth max [V]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Vth @ 625nA [V]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Vth @ 3.13uA [V]

30nm PM on cantilever
(12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Vth @ 6.25uA [V]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Rvirgin [kOhm]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Rmin [kOhm]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Rmax [Mohm]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Rmax drift [%]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Isat [mA]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

I melt [mA]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

Resistance
activation energy Ea [eV]

30nm PM on
cantilever (12’’)

Gross check

1 run, 1 wfr, 7
cntr sites

1-way

Equivalent to
Agrate reference

3.4.   Boise
20nm integrated process development

This section is to be done by Boise.  This section is gated by completion of
test wafer characterization in previous section.  Cantilever validation will be
non-gating.

Response and success criteria are from array scorecard.

Modules that require development and approximate dev
material needs (* need to scrub with module owners *)

·
Stack PVD: ~ 5wfrs dev

·
WL patterning: etch, clean (assuming same
thickness): 50 dev wafers for DE, 25 dev wafers for wet

·
WL sealing: evaluate BKM options from section 2
(Agrate trial): 15 dev wafers

·
BL patterning: etch, clean: 25 dev wafer

·
BL sealing: matched to WL sealing, unless there
are issues: 5 wfrs

·
Metrology / SLAM sanity check: few wafers

Electrical trials will include

·
PM-only XP01 prod

·
Full stack XP01 prod

Response

Structure

Sensitivity

#
of runs wafers measmts

Exp
type

Success
criteria

Morpho
wafer characterization

51 WL line-bending
& buckling LWR/SpWR

SD-PM XP01 dev

Gross check

1 run, 1 wfr 3
locations

3nm

51 WL trench
sidewall profile angle

SD-PM XP01 dev

Gross check

1 run, 1 wfr 3
locations

> 87 deg

51 WL trench
bottom space

SD-PM XP01 dev

Gross check

1 run, 1 wfr 3
locations

>11.5nm

51 WL isolation
'time 0' defect density (residue, etch & seal damage)

SD-PM XP01 dev

Gross check

1 run, 1 wfr 2
locations

0 in FOV of SEM
& TEM

Latent defect
density after process thermal Dt (chal voids & cracks)

SD-PM XP01 QTA

Gross check

1 run, 1 wfr 2
locations

0 in FOV of SEM
& TEM

Post 65 W CMP oxide
recess + carbon erosion

SD-PM XP01 dev

Gross check

<10nm

55 BL line-bending
& buckling LWR/SpWR

SD-PM XP01 dev

Gross check

1 run, 1 wfr 3
locations

3nm

55 BL trench
sidewall profile angle

SD-PM XP01 dev

Gross check

1 run, 1 wfr 3
locations

> 86 deg

55 BL trench
bottom space

SD-PM XP01 dev

Gross check

1 run, 1 wfr 3
locations

> 11.5nm

55 BL isolation
defect density (residue, etch & seal damage, stringer)

SD-PM XP01 dev

Gross check

1 run, 1 wfr 3
locations

0 in FOV of SEM
& TEM

Electrical
characterization

Rvirgin

PM-only XP01 prod

Gross check

1 run

VTMAX

PM-only XP01 prod

Gross check

WL comb leakage
(all modes)

Full stack XP01
prod

Gross check

< 1e-10 A

Mongo-mono BL-BL
leakage (virgin)

Full stack XP01
prod

Gross check

< 1e-6 A

Mongo-mono BL-WL
leakage (virgin)

Full stack XP01
prod

Gross check

<1.6e-9A

Per bit off state
leakage @75% Vt

Full stack XP01
prod

Gross check

< 1e-8A

XPA defect density
(opens, shorts, leaky, program fail)

Full stack XP01
prod

Gross check

< 10 ppm

First fire VT

Full stack XP01
prod

Gross check

< 8.5V

4.     Data
summary and links

5.     Execution
log

References

Links to references in this page

Edit history

List of major changes